501M

Semiconductor Devices and Associated Hardware

TRANSISTOR

501M

5961-00-946-6640

5961 - Semiconductor Devices and Associated Hardware

L-3 Communications Electron

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    pnp

  • Mounting Method

    terminal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Precious Material And Location

    terminal surfaces gold

  • Precious Material

    gold

  • Overall Length

    0.260 inches maximum

  • Terminal Length

    1.000 inches minimum

  • Overall Diameter

    0.370 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

  • Voltage Rating In Volts Per Characteristic

    -50.0 maximum breakdown voltage, collector-to-base, emitter open and -35.0 maximum breakdown voltage, collector-to-emitter, base open and -5.2 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    -600.00 milliamperes maximum base current, dc

  • Power Rating Per Characteristic

    2.0 watts maximum forward power dissipation, dc

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Test Data Document

    04655-13-105262 drawing

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

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