JAN2N2606
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N2606
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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~1
data on certain environmental and performanc
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Current Rating Per Characteristic
-500.00 milliamperes zero-gate-voltage source current megawatts
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
gate
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 4.0 maximum gate to source cutoff voltage
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Features Provided
hermetically sealed case
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Semiconductor Material
silicon
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Internal Configuration
field effect
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Inclosure Material
metal
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Specification/Standard Data
81349-mil-s-19500/292 government specification
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal