2N657-I
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N657-I
5961 - Semiconductor Devices and Associated Hardware
Gilbert Engineering Co Inc/Incon
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Test Data Document
18876-10015704 drawing
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.260 inches maximum
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Terminal Length
1.500 inches minimum
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Overall Diameter
0.370 inches maximum
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
m100.0 maximum breakdown voltage,collector-to-base,emitter open and m100.0 maximum breakdown voltage,collector-to-emitter,base open and m8.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
90.00 microamperes maximum collector current,dc and 200.00 microamperes maximum collector cutoff current,dc,emitter open
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Power Rating Per Characteristic
4.0 watts maximum collector power dissipation