2N1162A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1162A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Overall Diameter
0.875 inches maximum
-
Mounting Facility Quantity
2
-
Electrode Internally-Electrically Connected To Case
collector
-
Semiconductor Material
germanium
-
Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage,collector-to-base,emitter open and 20.0 maximum breakdown voltage,collector-to-emitter,base open and 25.0 maximum breakdown voltage,emitter-to-base,collector open
-
Current Rating Per Characteristic
25.00 amperes maximum base current,dc and 25.00 amperes maximum collector current,dc
-
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
-
Overall Length
0.375 inches nominal
-
Internal Configuration
junction contact
-
Internal Junction Configuration
pnp
-
Mounting Method
unthreaded hole
-
Features Provided
hermetically sealed case
-
Maximum Operating Temp Per Measurement Point
100.0 deg celsius case
-
Specification/Standard Data
80131-release2995 professional/industrial association specification