2N917
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N917
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Mounting Method
terminal
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector minimum
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Diameter
0.219 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Overall Length
0.188 inches nominal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Specification/Standard Data
80131-release3634 professional/industrial association specification
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Terminal Circle Diameter
0.100 inches nominal