C20F

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

C20F

5961-00-955-7891

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Power Rating Per Characteristic

    500.0 milliwatts maximum peak gate power dissipation

  • Current Rating Per Characteristic

    80.00 amperes maximum average forward current averaged over a full 60-hz cycle

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakover voltage,dc

  • Semiconductor Material

    silicon

  • Nominal Thread Size

    0.250 inches

  • Overall Width Across Flats

    0.557 inches nominal

  • Internal Junction Configuration

    pnpn

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    2 tab,solder lug and 1 threaded stud

  • Thread Series Designator

    unf

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Overall Length

    0.502 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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