2N2284
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2284
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Height
0.260 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
200.0 maximum breakdown voltage, collector-to-base, emitter open and 1.5 maximum breakdown voltage, emitter-to-base, collector open and 100.0 maximum breakdown voltage, collector-to-emitter, base open
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Power Rating Per Characteristic
5.0 watts maximum collector power dissipation
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Overall Length
0.832 inches maximum
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Overall Width
0.390 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-37
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Internal Junction Configuration
pnp
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Current Rating Per Characteristic
3.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, rms value of alternation component
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius case
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Terminal Type And Quantity
3 uninsulated wire lead and 1 case