2N2110
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2110
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 100.0 maximum breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown voltage, emitter-to-base, collector open
-
Terminal Type And Quantity
1 insulated wire lead w/terminal lug and 1 threaded stud and 1 tab, solder lug
-
Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
-
Features Provided
hermetically sealed case
-
Internal Configuration
junction contact
-
Overall Length
1.125 inches maximum
-
Internal Junction Configuration
npn
-
Thread Series Designator
unf
-
Nominal Thread Size
0.500 inches
-
Mounting Facility Quantity
1
-
Mounting Method
threaded stud
-
Power Rating Per Characteristic
250.0 watts small-signal input power, common-collector minimum
-
Inclosure Material
metal
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Overall Width Across Flats
1.062 inches maximum
-
Specification/Standard Data
80131-release3577 professional/industrial association specification