2N2662
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N2662
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.850 inches maximum
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Overall Diameter
0.437 inches nominal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.510 inches maximum
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Nominal Thread Size
0.190 inches
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Semiconductor Material
germanium
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 20.0 maximum breakdown voltage, emitter-to-base, collector open
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Special Features
junction pattern arrangement: pnp
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Terminal Type And Quantity
3 uninsulated wire lead
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Specification/Standard Data
80131-release4200 professional/industrial association specification
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Thread Series Designator
unf
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Power Rating Per Characteristic
15.0 watts maximum collector power dissipation
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Current Rating Per Characteristic
1.00 amperes maximum base current, dc and 3.00 amperes maximum collector current, dc
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Mounting Method
threaded stud
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Mounting Facility Quantity
1