2N2662

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N2662

5961-00-964-5715

5961 - Semiconductor Devices and Associated Hardware

Electronic Industries Association

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.850 inches maximum

  • Overall Diameter

    0.437 inches nominal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Features Provided

    hermetically sealed case

  • Overall Width Across Flats

    0.510 inches maximum

  • Nominal Thread Size

    0.190 inches

  • Semiconductor Material

    germanium

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 20.0 maximum breakdown voltage, emitter-to-base, collector open

  • Special Features

    junction pattern arrangement: pnp

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Specification/Standard Data

    80131-release4200 professional/industrial association specification

  • Thread Series Designator

    unf

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius junction

  • Power Rating Per Characteristic

    15.0 watts maximum collector power dissipation

  • Current Rating Per Characteristic

    1.00 amperes maximum base current, dc and 3.00 amperes maximum collector current, dc

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

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