MCR649-3

Technical Characteristics

• Mounting Method

  unthreaded hole

• Terminal Type And Quantity

  2 tab, solder lug and 1 case

• Special Features

  junction pattern arrangement: pnpn

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius junction

• Power Rating Per Characteristic

  5.0 watts maximum peak gate power dissipation

• Current Rating Per Characteristic

  260.00 milliamperes maximum average forward current averaged over a full 60-hz cycle

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakover voltage, dc

• Semiconductor Material

  silicon

• Features Provided

  hermetically sealed case

• Electrode Internally-Electrically Connected To Case

  collector

• Internal Configuration

  junction contact

• Mounting Facility Quantity

  2

• Overall Diameter

  0.875 inches maximum

• Overall Length

  0.450 inches maximum

• Inclosure Material

  metal