7836563P002

Technical Characteristics

• Body Height

  0.165 inches minimum and 0.185 inches maximum

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  can

• Terminal Surface Treatment

  solder

• Design Function And Quantity

  2 gate, nand-nor

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Input Circuit Pattern

  dual 2 input

• Case Outline Source And Designator

  t0-100 joint electron device engineering council

• Maximum Power Dissipation Rating

  12.0 milliwatts

• Body Outside Diameter

  0.335 inches minimum and 0.370 inches maximum

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Output Logic Form

  diode-transistor logic

• Features Provided

  positive outputs and hermetically sealed and monolithic and internally compensated

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Terminal Type And Quantity

  10 pin

• Test Data Document

  03538-7836559 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)