ES79-2N1259

Semiconductor Devices and Associated Hardware

TRANSISTOR

ES79-2N1259

5961-00-984-2546

5961 - Semiconductor Devices and Associated Hardware

L-3 Communications Electron

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Terminal Length

    1.500 inches minimum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Junction Configuration

    pnp

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • ~2

    voltage, emitter-to-base, collector open

  • Voltage Rating In Volts Per Characteristic

    -50.0 maximum breakdown voltage, collector-to-base, emitter open and -50.0 maxim

  • Test Data Document

    09344-pc4902 drawing

  • Overall Length

    0.240 inches minimum and 0.260 inches maximum

  • Overall Diameter

    0.335 inches minimum and 0.370 inches maximum

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • ~1

    um breakdown voltage, collector-to-emitter, base open and -5.0 maximum breakdown

  • Current Rating Per Characteristic

    100.00 microamperes maximum collector current, dc

  • Power Rating Per Characteristic

    275.0 milliwatts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    175.0 deg celsius ambient air

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

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