103120
Semiconductor Devices and Associated Hardware
TRANSISTOR
103120
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Overall Diameter
1.250 inches maximum
-
Semiconductor Material
germanium
-
Inclosure Material
metal
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, emitter-to-base, collector open and 50.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open
-
Mounting Method
threaded stud
-
Power Rating Per Characteristic
70.0 watts small-signal input power, common-collector minimum
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Facility Quantity
1
-
Nominal Thread Size
0.190 inches
-
Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
-
Thread Series Designator
unf
-
Current Rating Per Characteristic
8.00 amperes source cutoff current minimum and 50.00 amperes source cutoff current maximum
-
Special Features
junction pattern arrangement: pnp
-
Terminal Type And Quantity
1 solder stud and 2 tab, solder lug
-
Internal Configuration
junction contact
-
Overall Length
0.520 inches maximum
-
Features Provided
hermetically sealed case