2N1070
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1070
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Current Rating Per Characteristic
1.30 amperes maximum base current, dc and 4.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
50.0 watts maximum collector power dissipation
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Overall Length
0.375 inches nominal
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open and 9.0 maximum breakdown voltage, emitter-to-base, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Specification/Standard Data
80131-release2402 professional/industrial association specification