VBE890-2N915
Semiconductor Devices and Associated Hardware
TRANSISTOR
VBE890-2N915
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Criticality Code Justification
feat
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Overall Diameter
0.230 inches maximum
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Specification/Standard Data
80131-release3603 professional/industrial association specification
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector minimum
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End Item Identification
kilauea class t-ae 26; guided missile, intercept; f4s aircraft; fms - a7 aircraft; aircraft, c-18a, ec-18b; velocity pool reparable piece parts; forrestal class cv; helicopter, mh-53e; blue ridge class lcc-19; an/urn-20urn-20(v)1 radio set
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-emitter, base open and 70.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Inclosure Material
metal
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Terminal Circle Diameter
0.100 inches nominal