BD181
Semiconductor Devices and Associated Hardware
TRANSISTOR
BD181
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum and 7.00 amperes source cutoff current minimum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Overall Width
26.6 millimeters maximum
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Voltage Rating In Volts Per Characteristic
7.0 maximum breakdown voltage, emitter-to-base, collector open and 55.0 maximum breakdown voltage, collector-to-base, emitter open and 45.0 maximum breakdown voltage, collector-to-emitter, base open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Height
9.5 millimeters maximum
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Power Rating Per Characteristic
78.0 watts small-signal input power, common-collector minimum
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Terminal Type And Quantity
3 pin
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Inclosure Material
metal
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Overall Length
39.5 millimeters maximum