GT816EU1

Technical Characteristics

• Mounting Facility Quantity

  1

• Mounting Method

  threaded stud

• Features Provided

  hermetically sealed case

• Overall Width Across Flats

  0.687 inches maximum

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  120.0 maximum breakdown voltage, collector-to-base, emitter open and 10.0 maximum breakdown voltage, emitter-to-base, collector open and 80.0 maximum breakdown voltage, collector-to-emitter, base open

• Current Rating Per Characteristic

  5.00 amperes maximum collector current, dc and 5.00 amperes maximum base current, dc

• Power Rating Per Characteristic

  3.0 watts maximum collector power dissipation

• Thread Series Designator

  unf

• Terminal Type And Quantity

  3 tab, solder lug

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Nominal Thread Size

  0.250 inches

• Internal Junction Configuration

  npn

• Electrode Internally-Electrically Connected To Case

  collector

• Internal Configuration

  junction contact

• Overall Diameter

  0.648 inches nominal

• Overall Length

  0.460 inches maximum

• Inclosure Material

  metal