MIS-12755

Semiconductor Devices and Associated Hardware

TRANSISTOR

MIS-12755

5961-01-009-8443

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

TRANSISTOR

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Technical Characteristics

  • Current Rating Per Characteristic

    200.00 milliamperes maximum collector current, dc

  • Power Rating Per Characteristic

    1.2 watts maximum total device dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Internal Junction Configuration

    npn

  • Terminal Circle Diameter

    0.100 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Transfer Ratio

    120.0 maximum static forward current transfer ratio, common-emitter

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Internal Configuration

    junction contact

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to base voltage, dc and 40.0 maximum collector to emitter voltage, dc and 5.0 maximum emitter to base voltage, dc

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.150 inches maximum

Certified to
AS6081 Methods

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