MIS-12755
Semiconductor Devices and Associated Hardware
TRANSISTOR
MIS-12755
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
200.00 milliamperes maximum collector current, dc
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Power Rating Per Characteristic
1.2 watts maximum total device dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Internal Junction Configuration
npn
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Transfer Ratio
120.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Internal Configuration
junction contact
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to base voltage, dc and 40.0 maximum collector to emitter voltage, dc and 5.0 maximum emitter to base voltage, dc
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Length
0.150 inches maximum