5M.5512.222.96

Semiconductor Devices and Associated Hardware

TRANSISTOR

5M.5512.222.96

5961-01-010-7906

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland Gmbh -Verteidigung

TRANSISTOR

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Technical Characteristics

  • ~1

    data on certain environmental and performanc

  • Mounting Method

    unthreaded hole

  • Transfer Ratio

    40.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter

  • Power Rating Per Characteristic

    5.0 watts small-signal input power, common-collector preset

  • Mounting Facility Quantity

    2

  • Overall Length

    1.177 inches minimum and 1.197 inches maximum

  • Semiconductor Material

    silicon

  • Overall Height

    0.270 inches minimum and 0.380 inches maximum

  • Current Rating Per Characteristic

    7.50 amperes source cutoff current minimum and 20.00 amperes source cutoff current maximum

  • Features Provided

    hermetically sealed case

  • Specification/Standard Data

    81349-mil-s-19500/456 government specification

  • Special Features

    junction pattern arrangement: npn

  • Internal Configuration

    junction contact

  • Voltage Rating In Volts Per Characteristic

    5.0 maximum emitter to base voltage, static, collector open and 80.0 maximum collector to emitter voltage/static/base open and 80.0 maximum collector to base voltage/static/emitter open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Terminal Type And Quantity

    2 pin

  • Electrode Internally-Electrically Connected To Case

    collector

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Inclosure Material

    metal

  • Test Data Document

    81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

Certified to
AS6081 Methods

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