MIS-12759

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

MIS-12759

5961-01-012-7157

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Overall Length

    0.210 inches maximum

  • Overall Diameter

    0.230 inches maximum

  • Mounting Method

    terminal

  • Power Rating Per Characteristic

    0.1 watts maximum average gate power-forward

  • Test Data Document

    12173-mis-12759 specification

  • Inclosure Material

    metal

  • Terminal Length

    1.500 inches nominal

  • Overall Height

    0.170 inches minimum and 0.210 inches maximum

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    pnpn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    1.00 amperes maximum forward current,dc and 180.00 milliamperes maximum average on-state current,180 degrees conduction angle,average over a full 60-hz cycle

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

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