5L.5512.101.69
Semiconductor Devices and Associated Hardware
TRANSISTOR
5L.5512.101.69
5961 - Semiconductor Devices and Associated Hardware
Eads Deutschland Gmbh -Verteidigung
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open
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Thread Series Designator
unf
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Overall Diameter
0.408 inches nominal
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Special Features
junction pattern arrangement: pnp
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Length
0.394 inches nominal
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Semiconductor Material
silicon
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Overall Width Across Flats
0.430 inches nominal
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Terminal Type And Quantity
1 tab, solder lug and 3 wire hook
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-59
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Inclosure Material
metal
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum