Q2T3725N

Technical Characteristics

• Inclosure Material

  plastic

• Overall Length

  0.785 inches maximum

• Overall Height

  0.180 inches maximum

• Overall Width

  0.325 inches maximum

• Internal Configuration

  junction contact all transistor

• Internal Junction Configuration

  npn all transistor

• Component Name And Quantity

  4 transistor

• Mounting Method

  press fit

• Semiconductor Material

  silicon all transistor

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to emitter voltage/static/base open all transistor and 60.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 5.0 maximum emitter to base voltage, instantaneous

• Current Rating Per Characteristic

  1.00 amperes maximum collector current, dc all transistor

• Terminal Type And Quantity

  14 ribbon

• Power Rating Per Characteristic

  2.5 watts maximum total device dissipation all transistor

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction