2N6107
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6107
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector minimum
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Overall Width
0.355 inches maximum
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Special Features
junction pattern arrangement: pnp
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 tab, solder lug
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
0.420 inches maximum
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Specification/Standard Data
80131-release6235 professional/industrial association specification
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Voltage Rating In Volts Per Characteristic
70.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum collector to base voltage/static/emitter open
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Overall Height
0.190 inches maximum
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Current Rating Per Characteristic
3.00 amperes source cutoff current minimum and 7.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Mounting Method
unthreaded hole