MIS-14150/62

Semiconductor Devices and Associated Hardware

TRANSISTOR

MIS-14150/62

5961-01-016-0823

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

TRANSISTOR

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Transfer Ratio

    30.0 minimum static forward current transfer ratio, common-emitter

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current blank

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    15.0 watts small-signal input power, common-collector preset

  • Semiconductor Material

    silicon

  • Terminal Length

    1.500 inches minimum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Overall Length

    0.260 inches maximum

  • Overall Diameter

    0.370 inches maximum

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum collector to base voltage, dc and 80.0 maximum collector to emitter voltage/static/base open and 8.0 maximum emitter to base voltage, instantaneous

Certified to
AS6081 Methods

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