3N175

Technical Characteristics

• Inclosure Material

  metal

• Terminal Length

  0.500 inches minimum

• Channel Polarity And Control Type

  n-channel junction type

• Terminal Circle Diameter

  0.100 inches nominal

• Semiconductor Material

  silicon

• Power Rating Per Characteristic

  225.0 milliwatts maximum total device dissipation

• Specification/Standard Data

  80131-release6002 professional/industrial association specification

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Internal Configuration

  field effect

• Electrode Internally-Electrically Connected To Case

  source

• Mounting Method

  terminal

• Voltage Rating In Volts Per Characteristic

  30.0 maximum breakdown voltage,drain-to-source,with all other terminals short-circuited to source and 35.0 maximum breakdown voltage,gate-to-source,with all other terminals short-circuited to source

• Current Rating Per Characteristic

  50.00 milliamperes maximum drain current

• Terminal Type And Quantity

  4 uninsulated wire lead