8C1014-4

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Component Function Relationship

  matched

• Overall Height

  0.105 inches maximum all semiconductor device diode

• Inclosure Material

  ceramic all semiconductor device diode

• Precious Material And Location

  leads plated gold

• Test Data Document

  00724-20-00734 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating In Volts Per Characteristic

  45.0 minimum breakdown voltage, dc all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  95.0 deg celsius ambient air all semiconductor device diode

• Terminal Type And Quantity

  2 ribbon all semiconductor device diode

• Power Rating Per Characteristic

  1.0 watts small-signal input power, common-collector absolute all semiconductor device diode

• Overall Width

  0.127 inches maximum all semiconductor device diode

• Overall Length

  0.975 inches nominal all semiconductor device diode

• Component Name And Quantity

  4 semiconductor device diode

• Capacitance Rating In Picofarads

  6.0 minimum all semiconductor device diode and 6.7 maximum all semiconductor device diode

• Function For Which Designed

  voltage variable capacitor

• Mounting Method

  terminal all semiconductor device diode