SS3109H-9
Semiconductor Devices and Associated Hardware
TRANSISTOR
SS3109H-9
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to base voltage,dc and 40.0 maximum collector to emitter reverse voltage,with base short-circuited to emitter and 20.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage,dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Mounting Method
terminal
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current,dc
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Power Rating Per Characteristic
360.0 milliwatts maximum total device dissipation
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Terminal Type And Quantity
3 uninsulated wire lead