928807-2B

Semiconductor Devices and Associated Hardware

TRANSISTOR

928807-2B

5961-01-020-2731

5961 - Semiconductor Devices and Associated Hardware

Raytheon Company

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    170.0 maximum breakdown voltage, collector-to-base, emitter open and 150.0 maximum breakdown voltage, collector-to-emitter, base open

  • Power Rating Per Characteristic

    65.0 watts small-signal input power, common-collector preset

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum

  • Semiconductor Material

    silicon

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Overall Width

    1.030 inches maximum

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Test Data Document

    82577-928807 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Overall Length

    1.540 inches minimum and 1.555 inches maximum

  • Overall Height

    0.340 inches maximum

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    2 pin

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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Providing Quality People

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