GM820MU1

Technical Characteristics

• Design Function And Quantity

  2 gate, nand buffer

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic and glass

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  200.0 milliwatts

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Output Logic Form

  transistor-transistor logic

• Features Provided

  positive outputs and medium speed and monolithic and hermetically sealed and w/totem pole output

• Input Circuit Pattern

  dual 4 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Time Rating Per Chacteristic

  22.00 nanoseconds maximum propagation delay time, low to high level output and 18.00 nanoseconds maximum propagation delay time, high to low level output

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Height

  0.140 inches minimum and 0.180 inches maximum