69AJ150
Semiconductor Devices and Associated Hardware
TRANSISTOR
69AJ150
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.340 inches maximum
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Internal Configuration
junction contact-darlington connected
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
-80.0 maximum collector to base voltage/static/emitter open and -80.0 maximum collector to emitter voltage/static/base open and -7.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
-2.00 amperes maximum base current, dc and -4.00 amperes maximum collector current, dc
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Precious Material And Location
terminal surface gold
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Overall Diameter
0.500 inches maximum
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Mounting Facility Quantity
2
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Internal Junction Configuration
pnp
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Mounting Method
unthreaded hole
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Power Rating Per Characteristic
143.0 milliwatts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material
gold
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case