SP3725QD

Technical Characteristics

• Inclosure Material

  metal or glass or ceramic

• Precious Material And Location

  leads silver or leads plated gold

• Semiconductor Material

  silicon all transistor

• Power Rating Per Characteristic

  800.0 milliwatts small-signal input power, common-collector preset all transistor

• Overall Length

  0.785 inches maximum

• Overall Width

  0.280 inches maximum

• Features Provided

  hermetically sealed case

• Voltage Rating In Volts Per Characteristic

  50.0 maximum collector to emitter voltage/static/base open all transistor and 80.0 maximum collector to base voltage/static/emitter open all transistor and 6.0 maximum emitter to base voltage, static, collector open all transistor

• Special Features

  all transistor junction pattern arrangement: npn

• Function For Which Designed

  switching

• Overall Height

  0.180 inches maximum

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  14 ribbon

• Component Name And Quantity

  4 transistor

• Mounting Method

  press fit

• Current Rating Per Characteristic

  1.00 amperes source cutoff current maximum all transistor

• ~1

  data on certain environmental and performanc

• Test Data Document

  80063-sm-a-742219 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type