2N4135

Technical Characteristics

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  30.00 milliamperes maximum collector current, dc

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  4 uninsulated wire lead

• Internal Configuration

  junction contact

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  200.0 milliwatts maximum peak gate power dissipation

• Voltage Rating In Volts Per Characteristic

  30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open

• Terminal Circle Diameter

  0.100 inches nominal

• Mounting Method

  terminal

• Overall Diameter

  0.209 inches minimum and 0.230 inches maximum

• Terminal Length

  0.500 inches minimum

• Overall Length

  0.170 inches minimum and 0.210 inches maximum

• Inclosure Material

  metal