STQ1012

Technical Characteristics

• Component Name And Quantity

  4 transistor

• Current Rating Per Characteristic

  600.00 milliamperes source cutoff current maximum all transistor

• Overall Width

  0.325 inches maximum

• Inclosure Material

  ceramic

• Mounting Method

  terminal

• Capacitance Rating In Picofarads

  30.0 maximum all transistor

• Semiconductor Material

  silicon all transistor

• Power Rating Per Characteristic

  1.9 watts small-signal input power, common-collector absolute all transistor

• Overall Length

  0.785 inches maximum

• Terminal Length

  0.100 inches minimum

• Response Time

  30.0 nanoseconds maximum all transistor

• Features Provided

  hermetically sealed case

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-116

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to emitter voltage/static/base open all transistor and 60.0 maximum collector to base voltage/static/emitter open all transistor and 5.0 maximum emitter to base voltage, static, collector open all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  14 pin

• Special Features

  all transistor junction pattern arrangement: pnp

• Transfer Ratio

  35.0 minimum static forward current transfer ratio, common-emitter all transistor

• Overall Height

  0.300 inches minimum