74E4N681
Semiconductor Devices and Associated Hardware
TRANSISTOR
74E4N681
5961 - Semiconductor Devices and Associated Hardware
Navy, United States Department Of
TRANSISTOR
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Technical Characteristics
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Overall Length
0.155 inches maximum
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current minimum and 20.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Mounting Method
unthreaded hole
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Internal Configuration
junction contact-darlington connected
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Mounting Facility Quantity
2
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Terminal Type And Quantity
1 case and 2 pin
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Semiconductor Material
silicon
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Overall Width
1.050 inches maximum
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Features Provided
hermetically sealed case
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Internal Junction Configuration
npn
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector absolute
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage/static/base open and 80.0 maximum collector to base voltage, dc and 5.0 maximum emitter to base voltage, dc
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Electrode Internally-Electrically Connected To Case
collector
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Overall Height
0.690 inches minimum and 0.820 inches maximum