2N6253
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6253
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Terminal Type And Quantity
2 unthreaded hole and 1 case
-
Overall Height
0.450 inches maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Features Provided
hermetically sealed case
-
Power Rating Per Characteristic
115.0 watts small-signal input power, common-collector minimum
-
Overall Width
1.050 inches maximum
-
Voltage Rating In Volts Per Characteristic
55.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum emitter to base voltage, static, collector open and 45.0 maximum breakdown voltage, collector-to-emitter, base open
-
Semiconductor Material
silicon
-
Transfer Ratio
20.0 minimum static forward current transfer ratio, common-emitter and 150.0 maximum static forward current transfer ratio, common-emitter
-
Specification/Standard Data
80131-release6314 professional/industrial association specification
-
Current Rating Per Characteristic
15.00 amperes repetitive peak forward current blank and 7.00 amperes repetitive peak forward current maximum
-
Mounting Facility Quantity
2
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Overall Length
1.519 inches maximum
-
Inclosure Material
metal