L1D883ST83039

Technical Characteristics

• Overall Height

  0.027 inches minimum and 0.035 inches maximum

• Voltage Rating In Volts Per Characteristic

  35.0 maximum breakdown voltage, collector-to-emitter, base open and 35.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

• Inclosure Material

  metal

• Mounting Method

  press fit

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Overall Length

  0.070 inches minimum and 0.078 inches maximum

• Overall Width

  0.035 inches minimum and 0.045 inches maximum

• Power Rating Per Characteristic

  360.0 milliwatts small-signal input power, common-collector preset

• Electrode Internally-Electrically Connected To Case

  base

• Semiconductor Material

  silicon

• Terminal Type And Quantity

  4 bonding pad

• Features Provided

  hermetically sealed case

• Internal Configuration

  junction contact

• Current Rating Per Characteristic

  30.00 milliamperes source cutoff current maximum

• Special Features

  junction pattern arrangement: pnp