515-001
Semiconductor Devices and Associated Hardware
TRANSISTOR
515-001
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector preset
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Test Data Document
10001-2868660 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Terminal Circle Diameter
0.100 inches nominal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Voltage Rating In Volts Per Characteristic
35.0 maximum gate to source voltage and 25.0 maximum drain to source voltage and 35.0 maximum gate non-trigger voltage, dc
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Inclosure Material
metal
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Internal Configuration
field effect
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Current Rating Per Characteristic
-50.00 milliamperes source cutoff current maximum of standard range and 1.00 milliamperes source cutoff current minor
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.208 inches minimum and 0.230 inches maximum
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Semiconductor Material
silicon