2N5783L
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5783L
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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End Item Identification
hauge class t-ak3000; joint surveillance sys (jss)/ region ops ctrl center (rocc); aircraft, stratolifter c-135; t-akr 310 class
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Criticality Code Justification
feat
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Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum emitter to base voltage, static, collector open and 45.0 maximum breakdown voltage, collector-to-emitter, base open
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Internal Configuration
junction contact
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector preset
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
3.50 amperes source cutoff current maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Diameter
0.352 inches nominal
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Inclosure Material
metal
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Overall Length
0.250 inches nominal