85BB101
Semiconductor Devices and Associated Hardware
TRANSISTOR
85BB101
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Overall Length
0.440 inches maximum
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
8.0 maximum emitter to base voltage, dc and 120.0 maximum collector to base voltage, dc and 100.0 maximum collector to emitter voltage, dc
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
glass and metal
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Overall Width Across Flats
0.687 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-61
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Nominal Thread Size
0.250 inches