352-0756-060
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-0756-060
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect
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Current Rating Per Characteristic
10.00 milliamperes source cutoff current minor and 5.00 milliamperes zero-gate-voltage source current megawatts
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Power Rating Per Characteristic
175.0 milliwatts small-signal input power, common-collector preset
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Overall Diameter
0.080 inches maximum
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Inclosure Material
glass
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Features Provided
hermetically sealed case
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
30.0 maximum drain to gate voltage and 3.5 maximum gate to source voltage
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction