DM100P
Semiconductor Devices and Associated Hardware
TRANSISTOR
DM100P
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Inclosure Material
ceramic
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Overall Height
0.225 inches maximum
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Overall Width
0.355 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Voltage Rating In Volts Per Characteristic
50.0 nominal breakdown voltage, collector-to-emitter, base open
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Overall Length
0.225 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Current Rating Per Characteristic
8.00 amperes all primaries maximum
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Terminal Type And Quantity
2 tab, solder lug
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Mounting Facility Quantity
2
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Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector preset
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End Item Identification
instrument landing system (ils)
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Mounting Method
unthreaded hole