Q67000-H1031-F9

Technical Characteristics

• Test Data Document

  81349-mil-std-883 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Design Function And Quantity

  4 gate, nand buffer

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Features Provided

  schottky and hermetically sealed and monolithic and positive outputs and low power and w/totem pole output

• Maximum Power Dissipation Rating

  17.2 milliwatts

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Output Logic Form

  transistor-transistor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Terminal Type And Quantity

  14 printed circuit

• Input Circuit Pattern

  quad 2 input

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• End Item Identification

  f-tf-15 common age fscm 99999

• Body Height

  0.140 inches minimum and 0.180 inches maximum