SP6494
Semiconductor Devices and Associated Hardware
TRANSISTOR
SP6494
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 2.0 maximum emitter to base voltage, static, collector open
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Inclosure Material
metal
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Transfer Ratio
30.0 minimum static forward current transfer ratio, common-emitter and 120.0 maximum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Current Rating Per Characteristic
2.00 amperes forward current, average universal and 2.00 amperes source cutoff current maximum and 1.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current blank
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
15.0 watts small-signal input power, common-collector preset
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction