JAN2N1911
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
JAN2N1911
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector peak
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Special Features
junction pattern arrangement: pnpn
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Current Rating Per Characteristic
150.00 amperes source cutoff current preset and 40.00 milliamperes forward current, total rms peak
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Voltage Rating In Volts Per Characteristic
1.8 maximum forward voltage, total rms and 100.0 maximum breakover voltage, dc
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Inclosure Material
metal
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general
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Overall Width Across Flats
1.031 inches minimum and 1.062 inches maximum
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Specification/Standard Data
81349-mil-prf- 19500 government specification
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Nominal Thread Size
0.500 inches
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 uninsulated wire lead w/terminal lug
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Overall Length
1.125 inches maximum
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~1
type data on certain environmental and performa
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Features Provided
hermetically sealed case
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Internal Configuration
junction contact