RT-1016G
Semiconductor Devices and Associated Hardware
TRANSISTOR
RT-1016G
5961 - Semiconductor Devices and Associated Hardware
Raytheon Technical Services Company
TRANSISTOR
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Technical Characteristics
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
250.00 milliamperes source cutoff current maximum
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
emitter
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Voltage Rating In Volts Per Characteristic
55.0 maximum collector to base voltage, dc and 33.0 maximum collector to emitter voltage, dc and 3.5 maximum emitter to base voltage, dc
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
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