4GE-27
Semiconductor Devices and Associated Hardware
TRANSISTOR
4GE-27
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.315 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
300.0 maximum breakdown voltage,collector-to-base,emitter open and 300.0 maximum breakdown voltage,collector-to-emitter,base open and 5.0 maximum breakdown voltage,emitter-to-base,collector open
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Terminal Type And Quantity
3 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.190 inches maximum
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Mounting Method
terminal
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current,dc
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Power Rating Per Characteristic
6.0 watts maximum total power dissipation