2N6383
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6383
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.450 inches maximum
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum and 250.00 milliamperes source cutoff current minimum
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Overall Length
1.573 inches maximum
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector minimum
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
5.0 maximum emitter to base voltage, static, collector open and 40.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3