200936-702
Semiconductor Devices and Associated Hardware
TRANSISTOR
200936-702
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
7.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, dc
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Power Rating Per Characteristic
40.0 watts maximum collector power dissipation
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Transfer Ratio
60.0 minimum static forward current transfer ratio, common-emitter and 240.0 maximum static forward current transfer ratio, common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Overall Length
1.252 inches maximum
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Overall Height
0.700 inches maximum
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Overall Width
0.340 inches maximum
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Mounting Facility Quantity
2
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Internal Junction Configuration
npn
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to base voltage/static/emitter open and 80.0 maximum collector to base voltage, dc and 6.0 maximum emitter to base, rms
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Terminal Type And Quantity
2 pin and 1 case