S82S115F

Technical Characteristics

• Bit Quantity (Non-Core)

  4096

• Body Height

  0.130 inches minimum and 0.170 inches maximum

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum access

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  185.00 milliamperes reverse current, dc absolute

• Memory Device Type

  prom

• Capitance Rating Per Characteristic

  5.00 input picofarads maximum and 8.00 output picofarads maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Overall Height

  0.275 inches minimum and 0.390 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Body Width

  0.560 inches maximum

• Input Circuit Pattern

  12 input

• Overall Length

  1.235 inches minimum and 1.290 inches maximum

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Features Provided

  w/strobe and bipolar and 3-state output and programmed and w/enable and hermetically sealed

• Maximum Power Dissipation Rating

  0.165 milliwatts